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| Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -20 -20 -5 -1.2 -1 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg * marking EIAJ:SC-62 Mini Power Type Package 1 150 -55 ~ +150 Marking symbol : 1N Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = -14V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -100mA** IC = -500mA, IB = -10mA** VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 120 30 ** min typ max -1 Unit A V V V -20 -20 -5 200 800 - 0.2 MHz pF Pulse measurement 2.50.1 +0.25 V 1 Transistor PC -- Ta 1.4 2SB1539 IC -- VCE -1.2 Ta=25C -1.0 -1.0 IB=-1.6mA -1.4mA -1.2mA -1.0mA - 0.8mA - 0.6mA - 0.4mA 25C Ta=75C -25C -1.2 VCE=-2V IC -- VBE Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 - 0.8 0.8 - 0.6 0.6 - 0.4 0.4 0.2 - 0.2 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 Collector current IC (A) - 0.8 - 0.6 - 0.4 - 0.2 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 Ta=75C 25C -25C IC/IB=50 600 hFE -- IC 240 VCE=-2V Ta=75C 500 fT -- I E VCB=-10V f=200MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 200 400 25C 160 - 0.3 - 0.1 - 0.03 - 0.01 300 -25C 200 120 80 100 40 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25C 80 60 40 20 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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